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AP4511GD low power mosfet Power Mosfet Transistor N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP4511GD low power mosfet Power Mosfet Transistor N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Model Number : AP4511GD

Certification : new & original

Place of Origin : original factory

MOQ : 10pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 7800pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Total Power Dissipation : 2.0 W

Linear Derating Factor : 0.016 W/℃

Storage Temperature Range : -55 to 150 ℃

Operating Junction Temperature Range : -55 to 150 ℃

Maximum Thermal Resistance, Junction-ambient : 62.5 ℃/W

Drain-Source Breakdown Voltage : 35 V

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N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

▼ Low Gate Charge

▼ Fast Switching Speed

▼ PDIP-8 Package

N-CH BVDSS 35V

RDS(ON) 25mΩ

ID 7A

P-CH BVDSS -35V

RDS(ON) 40mΩ

ID -6.1A

Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

Absolute Maximum Ratings

Symbol Parameter Rating Units
N-channel P-channel
VDS Drain-Source Voltage 35 -35 V
VGS Gate-Source Voltage ±20 ±20 V
ID@TA=25℃ Continuous Drain Current3 7 -6.1 A
ID@TA=70℃ Continuous Drain Current3 5.7 -5 A
IDM Pulsed Drain Current1 30 -30 A
PD@TA=25℃ Total Power Dissipation 2.0 W
Linear Derating Factor 0.016 W/℃
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Package Outline : DIP-8

Part Marking Information & Packing : DIP-8

Stock Offer (Hot sell)

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Product Tags:

small scale integrated circuits

      

integrated components

      
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