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CSD87312Q3E 2 Channel Mosfet Power Transistor Dual 30V N-CH NexFET Pwr MOSFETs

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ChongMing Group (HK) Int'l Co., Ltd

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CSD87312Q3E 2 Channel Mosfet Power Transistor Dual 30V N-CH NexFET Pwr MOSFETs

Brand Name : Ti

Model Number : CSD87312Q3E

MOQ : Contact us

Price : Contact us

Payment Terms : Paypal, Western Union, TT

Supply Ability : 50000 Pieces per Day

Delivery Time : The goods will be shipped within 3 days once received fund

Packaging Details : QFN

Description : MOSFET 2N-CH 30V 27A 8VSON

Channel Mode : Enhancement

Configuration : Dual

Minimum Operating Temperature : - 55 C

Maximum Operating Temperature : + 125 C

Transistor Polarity : N-Channel

Number of Channels : 2 Channel

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CSD87312Q3E Mosfet Power Transistor MOSFET Dual 30V N-CH NexFET Pwr MOSFETs

FEATURES

CommonSourceConn ection
Ultr a L o w Drain to Drain On-Resistance
Space Saving SON 3.3 x 3.3mm Plastic Package
Optimized for 5V Gate Drive
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free APPLICATIONS

APPLICATIONS

Adaptor/USB Input Protection for Notebook
PCs and Tablets

PRODUCT SUMMARY

TA = 25°C		TYPICAL VALUE		UNIT
VDS	Drain to Source Voltage	30		V
Qg	Gate Charge Total (4.5V)	6.3		nC
Qgd	Gate Charge Gate to Drain	0.7		nC
RDD(on)	Drain to Drain On Resistance (Q1+Q2)	VGS = 4.5V	31	mΩ
RDD(on)	Drain to Drain On Resistance (Q1+Q2)	VGS = 8V	27	mΩ
VGS(th)	Threshold Voltage	1.0		V

ORDERING INFORMATION

Device	Package	Media	Qty	Ship
CSD87312Q3E	SON 3.3 x 3.3mm Plastic Package	13-In ch Reel	2500	Tape and Reel

ABSOLUTE MAXIMUM RATINGS

TA = 25°C		VALUE	UNIT
VDS	Drain to Source Voltage	30	V
VGS	Gate to Source Voltage	+10/-8	V
ID	(1) Continuous Drain Current, TC = 25°C	27	A
IDM	Pulsed Drain Current (2)	45	A
PD	Power Dissipation	2.5	W
TJ, TSTG	Operating Junction and Storage Temperature Range	–55 to 150	°C
EAS	Avalanche Energy, single pulse ID =24A,L=0.1mH,RG =25Ω	29	mJ

DESCRIPTION

The CSD87312Q3E is a 30V common-source, dual N-channel device designed for adaptor/USB input protection. This SON 3.3 x 3.3mm device has low drain to drain on-resistance that minimizes losses and offers low component count for space constrained multi-cell battery charging applications.

Product Tags:

p channel mosfet driver circuit

n channel mos field effect transistor

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