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SI4425DDY-T1-GE3 Mosfet Power Transistor MOSFET -30V Vds 20V Vgs SO-8

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ChongMing Group (HK) Int'l Co., Ltd

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Brand Name : Ti

Model Number : SI4425DDY-T1-GE3

MOQ : Contact us

Price : Contact us

Payment Terms : Paypal, Western Union, TT

Supply Ability : 50000 Pieces per Day

Delivery Time : The goods will be shipped within 3 days once received fund

Packaging Details : SOT223

Description : P-Channel 30 V 19.7A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SOIC

Manufacturer : Vishay

Product Category : MOSFET

Technology : Si

Mounting Style : SMD/SMT

Package / Case : SO-8

Number of Channels : 1 Channel

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SI4425DDY-T1-GE3 Mosfet Power Transistor MOSFET -30V Vds 20V Vgs SO-8

FEATURES

APPLICATIONS

•Load Switches

- Notebook PCs

- Desktop PCs

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter		Symbol	Limit	Unit
Drain-Source Voltage		VDS	- 30	V
Gate-Source Voltage		VGS	± 20
Continuous Drain Current (TJ = 150 °C)	TC =25°C	ID	- 19.7	A
	TC =70°C		- 15.7
	TA = 25 °C		- 13b, c
	TA = 70 °C		- 10.4b, c
Pulsed Drain Current		IDM	- 50
Continous Source-Drain Diode Current	TC =25°C	IS	- 4.7
	TA = 25 °C		- 2.1b, c
Maximum Power Dissipation	TC =25°C	PD	5.7	W
	TC =70°C		3.6
	TA = 25 °C		2.5b, c
	TA = 70 °C		1.6b, c
Operating Junction and Storage Temperature Range		TJ, Tstg	- 55 to 150	°C

THERMAL RESISTANCE RATINGS
Parameter		Symbol	Typical	Maximum	Unit
Maximum Junction-to-Ambientb, d	t ≤ 10 s	RthJA	35	50	°C/W
Maximum Junction-to-Foot (Drain)	Steady State	RthJF	18	22	°C/W

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mosfet motor control circuit

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