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Silicon PNP Power Transistors ( Power Amplifier Applications ) 2SA1943

ChongMing Group (HK) Int'l Co., Ltd
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Silicon PNP Power Transistors ( Power Amplifier Applications ) 2SA1943

Model Number : 2SA1943

Certification : new & original

Place of Origin : original factory

MOQ : 20pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 10000pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Description : Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)

Collector-base voltage : -230 V

Collector-emitter voltage : -230 V

Emitter-base voltage : -5 V

Collector current : -15 A

Base current : -1.5 A

Collector power dissipation : 150 W

Junction temperature : 150℃

Storage temperature : -55~150 ℃

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Silicon PNP Power Transistors 2SA1943

DESCRIPTION

·With TO-3PL package

·Complement to type 2SC5200

APPLICATIONS

·Power amplifier applications

·Recommended for 100W high fidelity

audio frequency amplifier output stage

PINNING

PIN DESCRIPTION
1 Emitter
2

Collector;connected to

mounting base

3 Base

CHARACTERISTICS Tj=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 -230 V
VCEsat Collector-emitter saturation voltage IC=-8A IB=-0.8A -3.0 V
VBE Base-emitter voltage IC=-7A ; VCE=-5V -1.5 V
ICBO Collector cut-off current VCB=-230V; IE=0 -5 μA
IEBO Emitter cut-off current VEB=-5V; IC=0 -5 μA
hFE-1 DC current gain IC=-1A ; VCE=-5V 55 160
hFE-2 DC current gain IC=-7A ; VCE=-5V 35
fT Transition frequency IC=-1A ; VCE=-5V 30 MHz
COB Collector output capacitance f=1MHz;VCB=-10V 360 pF

‹ hFE-1 classifications

R O
55-110 80-160

PACKAGE OUTLINE


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