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2N3906 PNP General Purpose Amplifier Power Mosfet Transistor PNP switching transistor

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2N3906 PNP General Purpose Amplifier Power Mosfet Transistor PNP switching transistor

Model Number : 2N3906

Certification : new & original

Place of Origin : original factory

MOQ : 10pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 9600pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Description : Bipolar (BJT) Transistor PNP 40 V 200 mA 250MHz 625 mW Through Hole TO-92

collector-base voltage : −40 V

collector-emitter voltage : −40 V

emitter-base voltage : −6 V

total power dissipation : 500 mW

storage temperature : −65 to +150 °C

operating ambient temperature : −65 to +150 °C

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PNP switching transistor 2N3906

FEATURES
• Low current (max. 200 mA)
• Low voltage (max. 40 V).

APPLICATIONS
• High-speed switching in industrial applications.

DESCRIPTION
PNP switching transistor in a TO-92; SOT54 plastic package. NPN complement: 2N3904.

PINNING

PINDESCRIPTION
1collector
2base
3emitter








LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT
VCBOcollector-base voltageopen emitter−−40V
VCEOcollector-emitter voltageopen base−−40V
VEBOemitter-base voltageopen collector−−6V
ICcollector current (DC) −−200mA
ICMpeak collector current −−300mA
IBMpeak base current −−100mA
Ptottotal power dissipationTamb ≤ 25 °C−500mW
Tstgstorage temperature −65+150°C
Tjjunction temperature −150°C
Tamboperating ambient temperature −65+150°C

Fig.2 DC current gain; typical values.

Fig.3 Test circuit for switching times


PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads SOT54


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