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BTS432E2 switching power mosfet Power Mosfet Transistor Smart Highside Power Switch

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BTS432E2 switching power mosfet Power Mosfet Transistor Smart Highside Power Switch

Model Number : BTS432E2

Certification : new & original

Place of Origin : original factory

MOQ : 10pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 7900pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Description : Power Switch/Driver 1:1 N-Channel 9A PG-TO220-5-3

Supply voltage : 63 V

Operating temperature range : -40 to +150 °C

Storage temperature range : -55 to +150 °C

Power dissipation (DC) : 125 w

Electrostatic discharge capability (ESD) (Human Body Model) : 2.0 kV

Input voltage (DC) : -0.5 to +6 V

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PROFET® BTS 432 E2

Smart Highside Power Switch

Features

• Load dump and reverse battery protection1)

• Clamp of negative voltage at output

• Short-circuit protection

• Current limitation

• Thermal shutdown

• Diagnostic feedback

• Open load detection in ON-state

• CMOS compatible input

• Electrostatic discharge (ESD) protection

• Loss of ground and loss of Vbb protection2)

• Overvoltage protection

• Undervoltage and overvoltage shutdown with autorestart and hysteresis

Application

• µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads

• All types of resistive, inductive and capacitve loads

• Replaces electromechanical relays and discrete circuits

Product Summary

VLoad dump 80 V

Vbb-VOUT Avalanche Clamp 58 V

Vbb (operation) 4.5 ... 42 V

Vbb (reverse) -32 V

RON 38 mΩ

IL(SCp) 44 A

IL(SCr) 35 A

IL(ISO) 11 A

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS chip on chip technology. Providing protective functions.

Maximum Ratings at Tj = 25 °C unless otherwise specified

Parameter Symbol Values Unit
Supply voltage Vbb 63 V

Load dump protection VLoadDump = UA + Vs, UA = 13.5 V

RI= 2 Ω, RL= 1.1 Ω, td= 200 ms, IN= low or high

Vs 3) 66.5 V
Load current IL self-limited A

Operating temperature range

Storage temperature range

Tj

Tstg

-40 ...+150

-55 ...+150

°C
Power dissipation (DC) Ptot 125 W

Inductive load switch-off energy dissipation,

single pulse Tj=150 °C:

EAS

1.7

J

Electrostatic discharge capability (ESD) (Human Body Model) VESD 2.0 kV

Input voltage (DC)

Current through input pin (DC)

Current through status pin (DC)

VIN

IIN

IST

-0.5 ... +6

±5.0

±5.0

V

mA

Thermal resistance chip - case:

junction - ambient (free air):

SMD version, device on pcb4):

RthJC

RthJA

≤ 1

≤ 75

≤ tbd

K/W

Package and Ordering Code

All dimensions in mm

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Product Tags:

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