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IRFB20N50KPBF Power Mosfet Transistor power mosfet ic

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IRFB20N50KPBF Power Mosfet Transistor power mosfet ic

Model Number : IRFB20N50KPBF

Certification : new & original

Place of Origin : original factory

MOQ : 10pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 6900pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Description : N-Channel 500 V 20A (Tc) 280W (Tc) Through Hole TO-220AB

Pulsed Drain Current : 80 A

Power Dissipation : 280 W

Linear Derating Factor : 2.2 W/°C

Gate-to-Source Voltage : ± 30 V

Peak Diode Recovery dv/dt : 6.9 V/ns

Operating Junction and Storage Temperature : -55 to + 150°C

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MMSZ5243BT1G 21000 LRC 15+ SOD-123
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MMSZ5254BT1G 9000 ON 14+ SOD-323
MMSZ5255B 9000 DIODES 16+ SOD-123
MMSZ6V2T1G 9000 ON 13+ SOD-123
MOC3022S-TA1 22000 LITEON 15+ SMD
MOC3023M 14343 FSC 16+ DIP-6
MOC3023SR2M 7397 FSC 16+ SOP-6
MOC3023S-TA1 30000 LITEON 14+ SMD-6
MOC3030 6391 FSC 14+ DIP-6

IRFB20N50KPbF SMPS MOSFET

HEXFET Power MOSFET

Applications

  • Switch Mode Power Supply (SMPS)
  • Uninterruptible Power Supply
  • High Speed Power Switching
  • Hard Switched and High Frequency Circuits
  • Lead-Free

Benefits

  • Low Gate Charge Qg results in Simple Drive Requirement
  • Improved Gate, Avalanche and Dynamicdv/dt Ruggedness
  • Fully Characterized Capacitance and Avalanche Voltage and Current
  • Low RDS(on)

Absolute Maximum Ratings

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 20 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 12 A
IDM Pulsed Drain Current  80 A
PD @TC = 25°C Power Dissipation 280 W
Linear Derating Factor 2.2 W/°C
VGS Gate-to-Source Voltage ± 30 V
dv/dt Peak Diode Recovery dv/dt 6.9 V/ns

TJ

TSTG

Operating Junction and

Storage Temperature Range

 -55 to + 150 °C
Soldering Temperature, for 10 seconds (1.6mm from case ) 300 °C
Mounting Torque, 6-32 or M3 screw 10 N


Product Tags:

multi emitter transistor

      

silicon power transistors

      
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